UNISONIC TECHNOLOGIES CO., LTD 6N90
Preliminary Power MOSFET
6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET
The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N90 is generally applied in high efficiency switch mode power supplies.
* 6.2A, 900V, RDS(on) = 2.3Ω @VGS = 10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Halogen Free
Ordering Number Lead Free Halogen Free 6N90L-TA3-T 6N90G-TA3-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TF1-T 6N90G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-220F1 S: Source 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tube
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 900 Gate-Source Voltage VGSS ±30 Continuous (TC=25°C) ID 6.2 Drain Current Pulsed (Note 1) IDM 24 Single Pulsed (Note 2) EAS 650 Avalanche Energy Repetitive (Note 1) EAR 16.7 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 TO-220 167 Power Dissipation PD TO-220F/TO220F1 56 Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. * Drain current limited by maximum junction temperature....